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' 6 d1 d1 d2 d2 g1s2 g2 s1 top view 8 12 3 4 5 6 7 so-8 advanced process technology ultra low on-resistance dual n- channel mosfet surface mount available in tape & reel 150c operating temperature lead-free description these hexfet ? power mosfet's in a dual so-8 package utilize the lastest processingtechniques to achieve extremely low on-resistance per silicon area. additional features of these hexfet power mosfet's are a 150c junction operating temperature, fast switching speed and improved repetitive avalanche rating. these benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. the efficient so-8 package provides enhanced thermal characteristics and dual mosfet die capability making it ideal in a variety of power applications. this dual, surface mount so-8 can dramatically reduce board space and is also available in tape & reel. www.irf.com 1
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www.irf.com 3 !" 1 10 100 0.1 1 10 20s pulse width t = 25c a j ds v , drain-to-source voltage (v) 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v d i , drain-to-source current (a) 1 10 100 0.1 1 10 a ds v , drain-to-source voltage (v) d i , drain-to-source current (a) 20s pulse width t = 150c j 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v 1 10 100 3.0 3.5 4.0 4.5 5.0 t = 25c t = 150c j j gs v , gate-to-source voltage (v) d i , drain-to-source current (a) a v = 10v 20s pulse width ds 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t = 25c t = 150c j j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a downloaded from: http:///
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% & -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 5.8a 0 40 80 120 160 200 25 50 75 100 125 150 j e , single pulse avalanche energy (mj) as a starting t , junction temperature (c) itop 1.8a 3.2a bottom 4.0a d 0.020 0.024 0.028 0.032 0.036 0.040 0 1 02 03 04 0 a i , drain current (a) d v = 10v gs v = 4.5v gs 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0 3 6 9 12 15 a gs v , gate-to-source voltage (v) i = 5.8a d $ downloaded from: http:///
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%0 *"!( *!" !( !" 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 0.50 single pulse (thermal response) 0 300 600 900 1200 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 10 20 30 40 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 5.8a v = 15v ds downloaded from: http:///
www.irf.com 6 so-8 package outlinedimensions are shown in millimeters (inches) so-8 part marking e1 de y b aa1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms -0 12aa. not es : 1. dimens ioning & t olerancing per as me y14.5m-1994. 2. cont rolling dimens ion: millimet er 3. dimensions are shown in millimeters [inches]. 5 dimens ion does not include mold prot rus ions . 6 dimens ion does not include mold prot rus ions . mold prot rus ions not t o exceed 0.25 [.010]. 7 dimens ion is t he lengt h of lead for s oldering t o a s ubs t rat e. mold prot rus ions not t o exceed 0.15 [.006]. 8x 1.78 [.070] dat e code (yww) xxxx international rectifier logo f7101 y = last digit of the year part number lot code ww = we e k example: t his is an irf7101 (mos fet ) p = designates lead-free product (optional) a = as s e mb l y s i t e code notes: 1. for an automotive qualified version of this part please see http://www.irf.com/product-info/auto/ 2. for the most current drawing please refer to ir website at http://www.irf.com/package/ downloaded from: http:///
www.irf.com 7 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reeldimensions are shown in millimeters (inches) ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/2010 data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on irs web site. downloaded from: http:///

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